Gate drive transformers are used to modify the voltage level to a gate. They also provide impedance matching and voltage isolation. Most gate drive transformers are used with high-speed switching devices such as field effect transistor (FET) and insulated gate bipolar transistor (IGBT) electronics. Pulse transformers are gate drive transformers that deliver a pulse or series of pulses to a semiconductor gate. Trigger transformers use a voltage pulse to initiate an action or event. Like other gate drive transformers, they are designed to minimize winding capacitance and leakage inductance. Performance specifications for gate drive transformers include operating frequency range, direct current resistance (DCR), output voltage, power rating, isolation or high potential (hipot) level, operating temperature and maximum dimension. Direct current resistance (DCR) is the resistance of the transformer’s winding as measured with DC current. It is usually specified as a maximum rating. Isolation or hipot level is the maximum voltage that can be applied to a gate drive transformer without breaking the winding or dielectric.