Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors.
Diodes are electronic components that conduct electric current in only one direction, functioning as a one-way valve. Diodes are manufactured using semiconductor materials such as silicon, germanium or selenium and are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators.
Oscillators are devices that are used to generate repetitive signals. They produce output signals without an input signal. There are two major types of electronic oscillators: harmonic oscillators and relaxation oscillators. Harmonic oscillators produce sine wave outputs. Relaxation oscillators produce non-sine wave outputs such as square wave, rectangular wave, and sawtooth outputs.
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals.
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
Power rectifiers are electrical devices that convert alternating current (AC) to direct current (DC). They are an integral part of telecom rectifiers for the telecommunications industry, and in battery chargers, DC power systems, and other power system devices.
Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type.
