Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals.

Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type.

Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type.

Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate.

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.

RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude.

Bias tees allow the insertion of DC voltages into a signal path without disrupting the existing signal in that path.