Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More

Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. Search by Specification | Learn More

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More

Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. Search by Specification | Learn More

Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More

RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. Search by Specification | Learn More