Information about Schottky Diodes

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About Schottky Diodes

Schottky diodes (Schottky barrier diodes, Shottky diodes) consist of a metal layer which contacts a semiconductor element. The metal layer is heavily occupied with conduction-band electrons, but the N-type semiconductor region is lightly doped. When forward-biased, the higher-energy electrons in the N region are injected into the metal region, where they give up their excess energy very rapidly. The metal / semiconductor junctions exhibit rectifying behavior, allowing the current to pass through the structure more readily with one polarity than the other. Most Schottky diodes are used in high-frequency applications and fast-switching digital circuits. These hot-carrier diodes operate only with majority carriers. Because there are no minority carriers, there is no reverse-current leakage as with other types of diodes. Moreover, unlike conventional rectifier diodes, Schottky diodes exhibit a very rapid change in response to bias.

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Diode Arrays

Diode arrays are composed of multiple discrete (usually unconnected) diodes on a single silicon chip. Diode arrays are important semiconductor products because they save assembly time and improve reliability over individually packaged diodes. In general, diode arrays use four or more diodes in a single package.

High Voltage Diodes

High voltage diodes are designed for use in high-voltage applications.

PIN Diodes

PIN diodes are three-layer semiconductor diodes consisting of an intrinsic layer separating heavily doped P and N layers. The charge stored in the intrinsic layer in conjunction with other diode parameters determines the resistance of the diode at RF and microwave frequencies.

RF Diodes

RF diodes are designed to handle high-power radio frequency (RF) signals in stereo amplifiers, radio transmitters, television monitors, and other RF or microwave devices.

Transient Voltage Suppressor Diodes (TVS)

Transient voltage suppressor (TVS) diodes are designed to limit over-voltages. They can dissipate high amounts of transient power in a short period of time.

Tunnel Diodes

Tunnel diodes are heavily doped P-N diodes in which electron tunneling from the conduction band in the N-type material to the valence band in the P-type region produces a region of negative resistance. This negative-resistance region is the most important area of operation. As the voltage is increased, the current decreases. This feature makes tunneling diodes especially useful in oscillators and radio frequency (RF) applications.

Varactor Diodes

Varactor diodes are p-n junction diodes that are designed to act as a voltage controlled capacitance when operated under reverse bias.

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