Information about Metal-oxide Semiconductor FET (MOSFET)

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About Metal-oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. When voltage is applied to the gate, current flows from the drain to the source. A thin layer of oxide insulation keeps current from flowing between the gate and the channel. There are two basic types of metal-oxide semiconductor FETs: n-channel and p-channel. N-channel devices conduct through electrons. P-channel devices conduct through “holes”. Both types of metal-oxide semiconductor FETs provide significantly higher switching speeds than bipolar transistors. In addition, MOSFETs generate little heat, offer excellent linearity, and provide high efficiency and fast reaction times.

Products & Services Related to Metal-oxide Semiconductor FET (MOSFET)

Bipolar RF Transistors

RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.

Darlington Transistors

Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors.

Power Bipolar Transistors

Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals.

Power MOSFET

Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.

RF MOSFET Transistors

RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc.

RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.

Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.