Information about Power Bipolar Transistors

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About Power Bipolar Transistors

Power bipolar transistors are semiconductors in which a base n-type or p–type layer is sandwiched between emitter and collector layers of the opposite type. There are two polarities available: PNP and NPN. PNP devices consist of an n-type layer sandwiched between two p-type layers. NPN devices consist of a p-type layer sandwiched between two n-type layers. With both arrangements, the junctions between semiconductor sections amplify weak incoming signals. In addition, the thick and low-doped collector region results in a large blocking voltage. Typically, power bipolar transistors are operated at lower current densities to improve the power dissipation per unit of area. Larger devices are used with larger currents. Silicon is the most commonly used material because of its high thermal conductivity and relatively low cost. Silicon carbide offers performance advantages, but is a more expensive material.

Products & Services Related to Power Bipolar Transistors

Bipolar RF Transistors

RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.

Darlington Transistors

Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors.

Metal-oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.

Power MOSFET

Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.

RF MOSFET Transistors

RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc.

RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.

Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.

Engineering Web: Power Bipolar Transistors - Machine Design

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Power Semiconductors and ICs \| Machine Design Transistors are grouped into two categories: bipolar-junction transistors (BJTs) and field-effect transistors (FETs). The two types of field-effect
Power Control \| Machine Design A variety of power devices are used, including bipolar and MOSFET transistors, insulated-gate bipolar transistors (IGBTs), and MOS-controlled
Power OP Amps \| Machine Design The alternative to power op amps in most applications is to build comparable circuits with discrete power transistors.

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