Information about Power MOSFET

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About Power MOSFET

Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.

Products & Services Related to Power MOSFET

Bipolar RF Transistors

RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.

Darlington Transistors

Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors.

Metal-oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.

Power Bipolar Transistors

Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals.

RF MOSFET Transistors

RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc.

RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.

Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.

Engineering Web: Power MOSFET - Machine Design

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Power Management \| Machine Design is packaged in a fully molded TO-220 with controller chip and MOSFET, for output power up to 140 W at universal input or 240 W at 230 Vac input.
Power Semiconductors and ICs \| Machine Design Power Semiconductors and ICs November 15, 2002
Switching Power-Supply Chips \| Machine Design fully molded TO-220 package that holds the controller chip and MOSFET for output power up to 140 W at universal input, or 240 W at 230-Vac input.

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