Information about Transistors

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About Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Invented in 1947 at Bell Labs, transistors have become the key ingredient of all digital circuits, including computers. It is the solid-state analog to the triode electron tube; the transistor has replaced the electron tube for virtually all-common applications. The transistor is an arrangement of semiconductor materials that share common physical boundaries. Materials most commonly used are silicon, gallium arsenide, and germanium, into which a process called “doping” has introduced impurities. In n-type semiconductors the impurities or dopants result in an excess of electrons, or negative charges. In p-type semiconductors the dopants lead to a deficiency of electrons and therefore an excess of positive charge carriers or "holes.

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Darlington Transistors

Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors.

Insulated Gate Bipolar Transistors (IGBT)

Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching).

Metal-oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.

Power Bipolar Transistors

Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals.

Power MOSFET

Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.

RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.

Small-signal Bipolar Transistors (BJT)

Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type.

Engineering Web: Transistors - Machine Design

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Long Live the Microelectronics Revolution \| Machine Design
Power Semiconductors and ICs \| Machine Design Transistors are grouped into two categories: bipolar-junction transistors (BJTs) and field-effect transistors (FETs). The two types of field-effect
First bendable-sheet image scanner \| Machine Design It contains a twodimensional array of organic transistors and organic photodiodes.

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